Mobility Enhancement of Transparent IZO/GrRM Heterostructure via Graphene-Random-Mesh Carrier Pathways

Mobility Enhancement of Transparent IZO/GrRM Heterostructure via Graphene-Random-Mesh Carrier Pathways

Indium zinc oxide (IZO)/graphene random mesh (GrRM) heterostructures are proposed using GrRM not only to provide a highly conductive carrier pathway to enhance the mobility of IZO film but also to allow retention of the high on/off ratio in IZO and high transparency. The vacancies in GrRM act as ser...

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Veröffentlicht in:Advanced electronic materials 2016-06, Vol.2 (6), p.n/a
Hauptverfasser: Shin, Yong Seon, Kang, Won Tae, Kim, Young Rae, Won, Ui Yeon, Lee, Ki Young, Heo, Jin Seong, Park, Seong Jun, Lee, Young Hee, Yu, Woo Jong
Format: Artikel
Sprache:eng
Schlagworte:
graphene random mesh
heterostructure transistors
indium zinc oxide
transparent transistors
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Zusammenfassung:Indium zinc oxide (IZO)/graphene random mesh (GrRM) heterostructures are proposed using GrRM not only to provide a highly conductive carrier pathway to enhance the mobility of IZO film but also to allow retention of the high on/off ratio in IZO and high transparency. The vacancies in GrRM act as series of tiny IZOs, which overcomes the large off‐state leakage current in IZO/graphene.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.201500382