OFET-Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2-bis(Hetaryl)ethene Dielectric Layers

OFET-Based Memory Devices Operating via Optically and Electrically Modulated Charge Separation between the Semiconductor and 1,2-bis(Hetaryl)ethene Dielectric Layers

A design concept for memory elements operating via optically and electrically triggered charge separation between organic semiconductor and 1,2‐bis(hetaryl)ethene dielectric layers is proposed. These devices demonstrate high programming speeds, exceptionally wide memory windows (≈10 V), high switchi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced electronic materials 2016-03, Vol.2 (3), p.n/a
Hauptverfasser: Frolova, Lyubov A., Rezvanova, Alisa A., Shirinian, Valerii Z., Lvov, Andrey G., Kulikov, Alexander V., Krayushkin, Mikhail M., Troshin, Pavel A.
Format: Artikel
Sprache:eng
Schlagworte:
dihetarylethenes
memory elements
OFETs
optical memory
organic field-effect transistors
photoswitching
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A design concept for memory elements operating via optically and electrically triggered charge separation between organic semiconductor and 1,2‐bis(hetaryl)ethene dielectric layers is proposed. These devices demonstrate high programming speeds, exceptionally wide memory windows (≈10 V), high switching coefficients of ≈105 at reasonably low operation voltages (3–10 V), and good write‐read‐erase cycling stability.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.201500219