Ligand‐Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor

In graphene devices decorated with a layer of near‐infrared colloidal PbS quantum dots (QDs), the choice of the QD capping ligands and the integrity of the QD layer have a strong influence on the doping, carrier mobility, and photoresponse. By using short (

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Veröffentlicht in:Advanced electronic materials 2015-07, Vol.1 (7), p.n/a
Hauptverfasser: Turyanska, Lyudmila, Makarovsky, Oleg, Svatek, Simon A., Beton, Peter H., Mellor, Christopher J., Patanè, Amalia, Eaves, Laurence, Thomas, Neil R., Fay, Michael W., Marsden, Alexander J., Wilson, Neil R.
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Sprache:eng
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Zusammenfassung:In graphene devices decorated with a layer of near‐infrared colloidal PbS quantum dots (QDs), the choice of the QD capping ligands and the integrity of the QD layer have a strong influence on the doping, carrier mobility, and photoresponse. By using short (
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.201500062