Bias Polarity‐Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer
Bias polarity‐induced transformation of point contact resistive switching memory from a single transparent conductive metal oxide layer is demonstrated on three kinds of transparent conductive oxide (TCO) layers, including indium tin oxide, fluorine‐doped tin oxide, and aluminum‐doped zinc oxide, as...
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| Veröffentlicht in: | Advanced electronic materials 2015-08, Vol.1 (8), p.n/a |
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| container_title | Advanced electronic materials |
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| creator | Huang, Jian‐Shiou Lin, Yung‐Chang Tsai, Hung‐Wei Yen, Wen‐Chun Chen, Chia‐Wei Lee, Chi‐Yuan Chin, Tsung‐Shune Chueh, Yu‐Lun |
| description | Bias polarity‐induced transformation of point contact resistive switching memory from a single transparent conductive metal oxide layer is demonstrated on three kinds of transparent conductive oxide (TCO) layers, including indium tin oxide, fluorine‐doped tin oxide, and aluminum‐doped zinc oxide, as conducting electrode and memristive material by the controllably electrical field simultaneously. |
| doi_str_mv | 10.1002/aelm.201500061 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 2199-160X |
| ispartof | Advanced electronic materials, 2015-08, Vol.1 (8), p.n/a |
| issn | 2199-160X 2199-160X |
| language | eng |
| recordid | cdi_crossref_primary_10_1002_aelm_201500061 |
| source | Wiley Online Library Journals Frontfile Complete |
| subjects | indium tin oxide oxygen vacancies point contacts resistive random access memory resistive switching transparent conductive oxide |
| title | Bias Polarity‐Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer |
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