Bias Polarity‐Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer

Bias Polarity‐Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer

Bias polarity‐induced transformation of point contact resistive switching memory from a single transparent conductive metal oxide layer is demonstrated on three kinds of transparent conductive oxide (TCO) layers, including indium tin oxide, fluorine‐doped tin oxide, and aluminum‐doped zinc oxide, as...

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Veröffentlicht in:Advanced electronic materials 2015-08, Vol.1 (8), p.n/a
Hauptverfasser: Huang, Jian‐Shiou, Lin, Yung‐Chang, Tsai, Hung‐Wei, Yen, Wen‐Chun, Chen, Chia‐Wei, Lee, Chi‐Yuan, Chin, Tsung‐Shune, Chueh, Yu‐Lun
Format: Artikel
Sprache:eng
Schlagworte:
indium tin oxide
oxygen vacancies
point contacts
resistive random access memory
resistive switching
transparent conductive oxide
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Zusammenfassung:Bias polarity‐induced transformation of point contact resistive switching memory from a single transparent conductive metal oxide layer is demonstrated on three kinds of transparent conductive oxide (TCO) layers, including indium tin oxide, fluorine‐doped tin oxide, and aluminum‐doped zinc oxide, as conducting electrode and memristive material by the controllably electrical field simultaneously.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.201500061