Omniphobic Photoresist‐Assisted Patterning of Porous Polymethacrylate Films
Patterning of various surface properties, including roughness, wettability, adhesiveness, and mechanical properties, can markedly enhance the functionality of test systems. Thus, porous polymethacrylates prepared by polymerization‐induced phase separation (PIPS) represent a promising class of functi...
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Veröffentlicht in: | Advanced materials interfaces 2024-09 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Patterning of various surface properties, including roughness, wettability, adhesiveness, and mechanical properties, can markedly enhance the functionality of test systems. Thus, porous polymethacrylates prepared by polymerization‐induced phase separation (PIPS) represent a promising class of functional materials for the construction of miniaturized test systems. Different porosity, surface chemistry, and wettability are achieved in porous polymethacrylates with different precursor compositions. Nevertheless, only wettability microstructuring has been highlighted for these materials thus far. Here, the study presents a novel method for the direct and selective deposition of porous polymethacrylate films with different surface chemistry and porosity. The selective adhesion of omniphobic–omniphilic wettability patterns is used to facilitate the polymer pattern formation. The feasibility of patterning with different monomers and porogenic solvents is demonstrated. The topological study confirms the selective application of polymer structures with different thickness and roughness. The wettability characterization of the omniphobic material shows no significant changes caused by the operations performed. Thus, a new pattern with a greater difference in the wettability of the areas is produced in the process. Discontinuous dewetting of different liquids is performed. The use of poly(2‐hydroxyethyl methacrylate‐co‐ethylene dimethacrylate) (HEMA‐EDMA) modified patterns for precise living cell patterning is also demonstrated. |
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ISSN: | 2196-7350 2196-7350 |
DOI: | 10.1002/admi.202400569 |