Crystalline Insulators: Length Scale and Dimensionality of Defects in Epitaxial SnTe Topological Crystalline Insulator Films (Adv. Mater. Interfaces 2/2017)
The surface states of topological crystalline insulators (TCIs) are protected by crystal symmetry, suggesting that symmetry breaking surface defects may be used to tailor the surface states. Eric I. Altman and co‐workers show that the epitaxial growth of a TCI creates such defects which modulate the...
Gespeichert in:
| Veröffentlicht in: | Advanced materials interfaces 2017-01, Vol.4 (2), p.n/a |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | n/a |
|---|---|
| container_issue | 2 |
| container_start_page | |
| container_title | Advanced materials interfaces |
| container_volume | 4 |
| creator | Dagdeviren, Omur E. Zhou, Chao Zou, Ke Simon, Georg H. Albright, Stephen D. Mandal, Subhasish Morales‐Acosta, Mayra D. Zhu, Xiaodong Ismail‐Beigi, Sohrab Walker, Frederick J. Ahn, Charles H. Schwarz, Udo D. Altman, Eric I. |
| description | The surface states of topological crystalline insulators (TCIs) are protected by crystal symmetry, suggesting that symmetry breaking surface defects may be used to tailor the surface states. Eric I. Altman and co‐workers show that the epitaxial growth of a TCI creates such defects which modulate the surface electronic properties over mesoscopic and atomic scales in article 1601011. |
| doi_str_mv | 10.1002/admi.201770014 |
| format | Article |
| fullrecord | <record><control><sourceid>wiley_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1002_admi_201770014</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ADMI201770014</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1744-25ec1b7029caf4a423768efeca21075ef683da641c1c9c9e52ff5ad6b24f75263</originalsourceid><addsrcrecordid>eNqFkElPwzAQhS0EEhX0ynmOcEhqO4sbblUXqNSKQ8s5mjp2MXKcKg5L_gs_lkRFwAGJ0xtp3jfLI-SK0ZBRykdYlCbklAlBKYtPyICzLA1ElNDTX_U5GXr_TDsL44yPowH5mNatb9Ba4xQsnX-x2FS1v4WVcvvmCTYSrQJ0BcxMqZw3lUNrmhYqDTOllWw8GAfzg2nw3aCFjdsq2FaHylZ708Hw5wJYGFt6uJ4UryGssVF12DU70SiVBz7qX7m5JGcarVfDL70gj4v5dnofrB7ultPJKpBMxHHAEyXZTlCeSdQxxjwS6bi_DTmjIlE6HUcFpjGTTGYyUwnXOsEi3fFYi4Sn0QUJj3NlXXlfK50falNi3eaM5n28eR9v_h1vB2RH4M1Y1f7jziez9fKH_QTEM4AI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Crystalline Insulators: Length Scale and Dimensionality of Defects in Epitaxial SnTe Topological Crystalline Insulator Films (Adv. Mater. Interfaces 2/2017)</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Dagdeviren, Omur E. ; Zhou, Chao ; Zou, Ke ; Simon, Georg H. ; Albright, Stephen D. ; Mandal, Subhasish ; Morales‐Acosta, Mayra D. ; Zhu, Xiaodong ; Ismail‐Beigi, Sohrab ; Walker, Frederick J. ; Ahn, Charles H. ; Schwarz, Udo D. ; Altman, Eric I.</creator><creatorcontrib>Dagdeviren, Omur E. ; Zhou, Chao ; Zou, Ke ; Simon, Georg H. ; Albright, Stephen D. ; Mandal, Subhasish ; Morales‐Acosta, Mayra D. ; Zhu, Xiaodong ; Ismail‐Beigi, Sohrab ; Walker, Frederick J. ; Ahn, Charles H. ; Schwarz, Udo D. ; Altman, Eric I.</creatorcontrib><description>The surface states of topological crystalline insulators (TCIs) are protected by crystal symmetry, suggesting that symmetry breaking surface defects may be used to tailor the surface states. Eric I. Altman and co‐workers show that the epitaxial growth of a TCI creates such defects which modulate the surface electronic properties over mesoscopic and atomic scales in article 1601011.</description><identifier>ISSN: 2196-7350</identifier><identifier>EISSN: 2196-7350</identifier><identifier>DOI: 10.1002/admi.201770014</identifier><language>eng</language><subject>epitaxial growth ; scanning probe microscopy ; SnTe ; surface states ; topological crystalline insulators</subject><ispartof>Advanced materials interfaces, 2017-01, Vol.4 (2), p.n/a</ispartof><rights>2017 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1744-25ec1b7029caf4a423768efeca21075ef683da641c1c9c9e52ff5ad6b24f75263</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fadmi.201770014$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fadmi.201770014$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27903,27904,45553,45554</link.rule.ids></links><search><creatorcontrib>Dagdeviren, Omur E.</creatorcontrib><creatorcontrib>Zhou, Chao</creatorcontrib><creatorcontrib>Zou, Ke</creatorcontrib><creatorcontrib>Simon, Georg H.</creatorcontrib><creatorcontrib>Albright, Stephen D.</creatorcontrib><creatorcontrib>Mandal, Subhasish</creatorcontrib><creatorcontrib>Morales‐Acosta, Mayra D.</creatorcontrib><creatorcontrib>Zhu, Xiaodong</creatorcontrib><creatorcontrib>Ismail‐Beigi, Sohrab</creatorcontrib><creatorcontrib>Walker, Frederick J.</creatorcontrib><creatorcontrib>Ahn, Charles H.</creatorcontrib><creatorcontrib>Schwarz, Udo D.</creatorcontrib><creatorcontrib>Altman, Eric I.</creatorcontrib><title>Crystalline Insulators: Length Scale and Dimensionality of Defects in Epitaxial SnTe Topological Crystalline Insulator Films (Adv. Mater. Interfaces 2/2017)</title><title>Advanced materials interfaces</title><description>The surface states of topological crystalline insulators (TCIs) are protected by crystal symmetry, suggesting that symmetry breaking surface defects may be used to tailor the surface states. Eric I. Altman and co‐workers show that the epitaxial growth of a TCI creates such defects which modulate the surface electronic properties over mesoscopic and atomic scales in article 1601011.</description><subject>epitaxial growth</subject><subject>scanning probe microscopy</subject><subject>SnTe</subject><subject>surface states</subject><subject>topological crystalline insulators</subject><issn>2196-7350</issn><issn>2196-7350</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqFkElPwzAQhS0EEhX0ynmOcEhqO4sbblUXqNSKQ8s5mjp2MXKcKg5L_gs_lkRFwAGJ0xtp3jfLI-SK0ZBRykdYlCbklAlBKYtPyICzLA1ElNDTX_U5GXr_TDsL44yPowH5mNatb9Ba4xQsnX-x2FS1v4WVcvvmCTYSrQJ0BcxMqZw3lUNrmhYqDTOllWw8GAfzg2nw3aCFjdsq2FaHylZ708Hw5wJYGFt6uJ4UryGssVF12DU70SiVBz7qX7m5JGcarVfDL70gj4v5dnofrB7ultPJKpBMxHHAEyXZTlCeSdQxxjwS6bi_DTmjIlE6HUcFpjGTTGYyUwnXOsEi3fFYi4Sn0QUJj3NlXXlfK50falNi3eaM5n28eR9v_h1vB2RH4M1Y1f7jziez9fKH_QTEM4AI</recordid><startdate>20170123</startdate><enddate>20170123</enddate><creator>Dagdeviren, Omur E.</creator><creator>Zhou, Chao</creator><creator>Zou, Ke</creator><creator>Simon, Georg H.</creator><creator>Albright, Stephen D.</creator><creator>Mandal, Subhasish</creator><creator>Morales‐Acosta, Mayra D.</creator><creator>Zhu, Xiaodong</creator><creator>Ismail‐Beigi, Sohrab</creator><creator>Walker, Frederick J.</creator><creator>Ahn, Charles H.</creator><creator>Schwarz, Udo D.</creator><creator>Altman, Eric I.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20170123</creationdate><title>Crystalline Insulators: Length Scale and Dimensionality of Defects in Epitaxial SnTe Topological Crystalline Insulator Films (Adv. Mater. Interfaces 2/2017)</title><author>Dagdeviren, Omur E. ; Zhou, Chao ; Zou, Ke ; Simon, Georg H. ; Albright, Stephen D. ; Mandal, Subhasish ; Morales‐Acosta, Mayra D. ; Zhu, Xiaodong ; Ismail‐Beigi, Sohrab ; Walker, Frederick J. ; Ahn, Charles H. ; Schwarz, Udo D. ; Altman, Eric I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1744-25ec1b7029caf4a423768efeca21075ef683da641c1c9c9e52ff5ad6b24f75263</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>epitaxial growth</topic><topic>scanning probe microscopy</topic><topic>SnTe</topic><topic>surface states</topic><topic>topological crystalline insulators</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dagdeviren, Omur E.</creatorcontrib><creatorcontrib>Zhou, Chao</creatorcontrib><creatorcontrib>Zou, Ke</creatorcontrib><creatorcontrib>Simon, Georg H.</creatorcontrib><creatorcontrib>Albright, Stephen D.</creatorcontrib><creatorcontrib>Mandal, Subhasish</creatorcontrib><creatorcontrib>Morales‐Acosta, Mayra D.</creatorcontrib><creatorcontrib>Zhu, Xiaodong</creatorcontrib><creatorcontrib>Ismail‐Beigi, Sohrab</creatorcontrib><creatorcontrib>Walker, Frederick J.</creatorcontrib><creatorcontrib>Ahn, Charles H.</creatorcontrib><creatorcontrib>Schwarz, Udo D.</creatorcontrib><creatorcontrib>Altman, Eric I.</creatorcontrib><collection>CrossRef</collection><jtitle>Advanced materials interfaces</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dagdeviren, Omur E.</au><au>Zhou, Chao</au><au>Zou, Ke</au><au>Simon, Georg H.</au><au>Albright, Stephen D.</au><au>Mandal, Subhasish</au><au>Morales‐Acosta, Mayra D.</au><au>Zhu, Xiaodong</au><au>Ismail‐Beigi, Sohrab</au><au>Walker, Frederick J.</au><au>Ahn, Charles H.</au><au>Schwarz, Udo D.</au><au>Altman, Eric I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Crystalline Insulators: Length Scale and Dimensionality of Defects in Epitaxial SnTe Topological Crystalline Insulator Films (Adv. Mater. Interfaces 2/2017)</atitle><jtitle>Advanced materials interfaces</jtitle><date>2017-01-23</date><risdate>2017</risdate><volume>4</volume><issue>2</issue><epage>n/a</epage><issn>2196-7350</issn><eissn>2196-7350</eissn><abstract>The surface states of topological crystalline insulators (TCIs) are protected by crystal symmetry, suggesting that symmetry breaking surface defects may be used to tailor the surface states. Eric I. Altman and co‐workers show that the epitaxial growth of a TCI creates such defects which modulate the surface electronic properties over mesoscopic and atomic scales in article 1601011.</abstract><doi>10.1002/admi.201770014</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2196-7350 |
| ispartof | Advanced materials interfaces, 2017-01, Vol.4 (2), p.n/a |
| issn | 2196-7350 2196-7350 |
| language | eng |
| recordid | cdi_crossref_primary_10_1002_admi_201770014 |
| source | Wiley Online Library Journals Frontfile Complete |
| subjects | epitaxial growth scanning probe microscopy SnTe surface states topological crystalline insulators |
| title | Crystalline Insulators: Length Scale and Dimensionality of Defects in Epitaxial SnTe Topological Crystalline Insulator Films (Adv. Mater. Interfaces 2/2017) |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T04%3A32%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-wiley_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Crystalline%20Insulators:%20Length%20Scale%20and%20Dimensionality%20of%20Defects%20in%20Epitaxial%20SnTe%20Topological%20Crystalline%20Insulator%20Films%20(Adv.%20Mater.%20Interfaces%202/2017)&rft.jtitle=Advanced%20materials%20interfaces&rft.au=Dagdeviren,%20Omur%20E.&rft.date=2017-01-23&rft.volume=4&rft.issue=2&rft.epage=n/a&rft.issn=2196-7350&rft.eissn=2196-7350&rft_id=info:doi/10.1002/admi.201770014&rft_dat=%3Cwiley_cross%3EADMI201770014%3C/wiley_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |