Crystalline Insulators: Length Scale and Dimensionality of Defects in Epitaxial SnTe Topological Crystalline Insulator Films (Adv. Mater. Interfaces 2/2017)

Crystalline Insulators: Length Scale and Dimensionality of Defects in Epitaxial SnTe Topological Crystalline Insulator Films (Adv. Mater. Interfaces 2/2017)

The surface states of topological crystalline insulators (TCIs) are protected by crystal symmetry, suggesting that symmetry breaking surface defects may be used to tailor the surface states. Eric I. Altman and co‐workers show that the epitaxial growth of a TCI creates such defects which modulate the...

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Veröffentlicht in:Advanced materials interfaces 2017-01, Vol.4 (2), p.n/a
Hauptverfasser: Dagdeviren, Omur E., Zhou, Chao, Zou, Ke, Simon, Georg H., Albright, Stephen D., Mandal, Subhasish, Morales‐Acosta, Mayra D., Zhu, Xiaodong, Ismail‐Beigi, Sohrab, Walker, Frederick J., Ahn, Charles H., Schwarz, Udo D., Altman, Eric I.
Format: Artikel
Sprache:eng
Schlagworte:
epitaxial growth
scanning probe microscopy
SnTe
surface states
topological crystalline insulators
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Zusammenfassung:The surface states of topological crystalline insulators (TCIs) are protected by crystal symmetry, suggesting that symmetry breaking surface defects may be used to tailor the surface states. Eric I. Altman and co‐workers show that the epitaxial growth of a TCI creates such defects which modulate the surface electronic properties over mesoscopic and atomic scales in article 1601011.
ISSN:2196-7350
2196-7350
DOI:10.1002/admi.201770014