Ultralong K 0.5 Mn 0.75 PS 3 Nanowires Tailored by K-Ion Scissors for Extraordinary Sodium-Ion Storage

1D layered nanowires (NWs) are expected to be excellent electrode materials due to their efficient electron/ion transport and strain/stress relaxation. However, it is a great challenge to synthesize layered NWs by a top-down synthetic route. Herein, ultralong 1D layered K Mn PS NWs (length: >100 ...

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Veröffentlicht in:Advanced materials (Weinheim) 2024-08, p.e2408963
Hauptverfasser: Tu, Xueyang, Xu, Hengyue, Pan, Youtan, Lv, Zhuoran, Wang, Linlin, Zhu, Bingyi, Lin, Tianquan, Bi, Hui, Fang, Yuqiang, Huang, Fuqiang
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Sprache:eng
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Zusammenfassung:1D layered nanowires (NWs) are expected to be excellent electrode materials due to their efficient electron/ion transport and strain/stress relaxation. However, it is a great challenge to synthesize layered NWs by a top-down synthetic route. Herein, ultralong 1D layered K Mn PS NWs (length: >100 µm; diameter: ≈300 nm) are synthesized for the first time using "K-ion chemical scissors", whose excellent sodium storage performance originates from the bifunctional structural unit, ingeniously combining the alloying energy storage functional unit (P-P dimer) with the quasi-intercalated functional unit ([MnS ] framework). Stress-driven K-ion scissors achieve the rapid transformation of MnPS bulk to K Mn PS NWs with directed tailoring. Compared to MnPS , the NWs exhibit enlarged interlayer spacing (9.32 Å), enhanced electronic conductivity (8.17 × 10 S m vs 4.47 × 10 S m ), and high ionic conductivity (2.14 mS cm ). As expected, the NWs demonstrate high capacity (709 mAh g at 0.5 A g ) and excellent cycling performance (≈100% capacity retention after 2500 cycles at 10 A g ), ranking among metal thiophosphates. A quasi-topological intercalation mechanism of the NWs is revealed through further characterizations. This work expands the top-down synthesis approach and offers innovative insights for the cost-effective and large-scale fabrication of NWs with outstanding electrochemical performance.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.202408963