Perovskite Memory Devices: High‐Performance Solution‐Processed Organo‐Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross‐Bar Array Structure (Adv. Mater. 21/2019)

Nonvolatile memory devices based on unipolar resistive switching in a solution‐processed organo‐metal halide perovskite are reported by Keehoon Kang, Takhee Lee, and co‐workers in article number 1804841. A facile synthesis of the perovskite layer with a nonhalide precursor allows the reliable fabrication of high‐yield cross‐bar array memory devices with a desirable ON/OFF ratio and electrical stability, which can potentially open a solution‐processing route for realizing high‐density resistive random‐access memory devices.