Controllable Modification of SiC Nanowires Encapsulated in BN Nanotubes

Controllable Modification of SiC Nanowires Encapsulated in BN Nanotubes

Semiconducting β‐SiC nanowires encapsulated in BN nanotubes are prepared using chemical vapor deposition (see Figure). An unusual feature—a gap of 10–15 nm in width between the inner wall of the BN tube and the SiC nanowire—allows various chemical and morphological modifications to be performed on t...

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Veröffentlicht in:Advanced materials (Weinheim) 2005-03, Vol.17 (5), p.545-549
Hauptverfasser: Li, Y., Dorozhkin, P. S., Bando, Y., Golberg, D.
Format: Artikel
Sprache:eng
Schlagworte:
Boron nitride
Nanocables
Silicon carbide
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Zusammenfassung:Semiconducting β‐SiC nanowires encapsulated in BN nanotubes are prepared using chemical vapor deposition (see Figure). An unusual feature—a gap of 10–15 nm in width between the inner wall of the BN tube and the SiC nanowire—allows various chemical and morphological modifications to be performed on the nanowires.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200401266