Orientation-Controlled Growth of Single-Crystal Silicon-Nanowire Arrays

Silicon nanowire arrays on silicon substrates can be synthesized with precise orientation depending on the crystal orientation of the substrate using a vapor–liquid–solid epitaxial growth mechanism. The projections of the as‐grown arrays form rectangular networks on silicon (100) substrates (see Figure), parallel straight lines on silicon (110) substrates, and triangular networks on silicon (111) substrates.