High Electron Mobility and Ambipolar Transport in Organic Thin-Film Transistors Based on a π-Stacking Quinoidal Terthiophene
Thin‐film transistors (TFTs) based on a new n‐channel organic semiconductor (DCMT; see Figure) are reported. An electron mobility as high as 0.2 cm2/V s was observed, as well as ambipolar TFT behavior. Variable temperature measurements reveal that electron conduction is activated, with a small activ...
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Veröffentlicht in: | Advanced materials (Weinheim) 2003-08, Vol.15 (15), p.1278-1282 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | Thin‐film transistors (TFTs) based on a new n‐channel organic semiconductor (DCMT; see Figure) are reported. An electron mobility as high as 0.2 cm2/V s was observed, as well as ambipolar TFT behavior. Variable temperature measurements reveal that electron conduction is activated, with a small activation energy of 35 ± 10 meV. These results demonstrate that quinoidal oligothiophenes are a promising new class of organic semiconductors for TFTs. |
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ISSN: | 0935-9648 1521-4095 |
DOI: | 10.1002/adma.200305200 |