High Electron Mobility and Ambipolar Transport in Organic Thin-Film Transistors Based on a π-Stacking Quinoidal Terthiophene

Thin‐film transistors (TFTs) based on a new n‐channel organic semiconductor (DCMT; see Figure) are reported. An electron mobility as high as 0.2 cm2/V s was observed, as well as ambipolar TFT behavior. Variable temperature measurements reveal that electron conduction is activated, with a small activ...

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Veröffentlicht in:Advanced materials (Weinheim) 2003-08, Vol.15 (15), p.1278-1282
Hauptverfasser: Chesterfield, R.J., Newman, C.R., Pappenfus, T.M., Ewbank, P.C., Haukaas, M.H., Mann, K.R., Miller, L.L., Frisbie, C.D.
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Sprache:eng
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Zusammenfassung:Thin‐film transistors (TFTs) based on a new n‐channel organic semiconductor (DCMT; see Figure) are reported. An electron mobility as high as 0.2 cm2/V s was observed, as well as ambipolar TFT behavior. Variable temperature measurements reveal that electron conduction is activated, with a small activation energy of 35 ± 10 meV. These results demonstrate that quinoidal oligothiophenes are a promising new class of organic semiconductors for TFTs.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200305200