Structure and optical property changes of sol‐gel derived VO 2 thin films

The semiconductor–metal phase change in VO 2 at approximately 67°C, which results in great changes in its optical, electrical, and magnetic properties, is described in detail. The synthesis of VO 2 thin films by the sol‐gel method is outlined and the structure and optical properties are characterize...

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Veröffentlicht in:Advanced materials (Weinheim) 1997-03, Vol.9 (3), p.244-246
Hauptverfasser: Lu, Songwei, Hou, Lisong, Gan, Fuxi
Format: Artikel
Sprache:eng
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Zusammenfassung:The semiconductor–metal phase change in VO 2 at approximately 67°C, which results in great changes in its optical, electrical, and magnetic properties, is described in detail. The synthesis of VO 2 thin films by the sol‐gel method is outlined and the structure and optical properties are characterized, including hysteresis phenomena in the transmittance–temperature and reflectivity–temperature plots. A mechanism of the phase change—confirmed to be the monoclinic‐to‐tetragonal rutile transition—is proposed based on coordinative field theory.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.19970090313