Reaction pathways in organometallic chemical vapor deposition(OMCVD)
The incorporation of heteroatom impurities derived from the ligands in organometallic chemical vapor deposition can now be avoided due to an understanding of the raection pathways involved. The development of the technique is traced, the various mechanisms discussed, and the important questions whic...
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| Veröffentlicht in: | Advanced materials (Weinheim) 1992-05, Vol.4 (5), p.375-378 |
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| container_end_page | 378 |
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| container_issue | 5 |
| container_start_page | 375 |
| container_title | Advanced materials (Weinheim) |
| container_volume | 4 |
| creator | Zinn, Alfred Niemer, Burkhard Kaesz, Herbert D. |
| description | The incorporation of heteroatom impurities derived from the ligands in organometallic chemical vapor deposition can now be avoided due to an understanding of the raection pathways involved. The development of the technique is traced, the various mechanisms discussed, and the important questions which still have to be answered presented. |
| doi_str_mv | 10.1002/adma.19920040514 |
| format | Article |
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| ispartof | Advanced materials (Weinheim), 1992-05, Vol.4 (5), p.375-378 |
| issn | 0935-9648 1521-4095 |
| language | eng |
| recordid | cdi_crossref_primary_10_1002_adma_19920040514 |
| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Applied sciences Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Metals. Metallurgy Methods of deposition of films and coatings film growth and epitaxy Physics |
| title | Reaction pathways in organometallic chemical vapor deposition(OMCVD) |
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