Reaction pathways in organometallic chemical vapor deposition(OMCVD)

Reaction pathways in organometallic chemical vapor deposition(OMCVD)

The incorporation of heteroatom impurities derived from the ligands in organometallic chemical vapor deposition can now be avoided due to an understanding of the raection pathways involved. The development of the technique is traced, the various mechanisms discussed, and the important questions whic...

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Veröffentlicht in:Advanced materials (Weinheim) 1992-05, Vol.4 (5), p.375-378
Hauptverfasser: Zinn, Alfred, Niemer, Burkhard, Kaesz, Herbert D.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Metals. Metallurgy
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Beschreibung
Zusammenfassung:The incorporation of heteroatom impurities derived from the ligands in organometallic chemical vapor deposition can now be avoided due to an understanding of the raection pathways involved. The development of the technique is traced, the various mechanisms discussed, and the important questions which still have to be answered presented.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.19920040514