Low‐Energy Oxygen Plasma Injection of 2D Bi 2 Se 3 Realizes Highly Controllable Resistive Random Access Memory

Resistive random access memory (RRAM) based on ultrathin 2D materials is considered to be a very feasible solution for future data storage and neuromorphic computing technologies. However, controllability and stability are the problems that need to be solved for practical applications. Here, by intr...

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Veröffentlicht in:	Advanced functional materials 2022-01, Vol.32 (1)
Hauptverfasser:	Yin, Chujun, Gong, Chuanhui, Tian, Siying, Cui, Yi, Wang, Xuepeng, Wang, Yang, Hu, Zhenheng, Huang, Jianwen, Wu, Chunyang, Chen, Bo, Wang, Xianfu, Li, Chaobo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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