Low‐Energy Oxygen Plasma Injection of 2D Bi 2 Se 3 Realizes Highly Controllable Resistive Random Access Memory

Resistive random access memory (RRAM) based on ultrathin 2D materials is considered to be a very feasible solution for future data storage and neuromorphic computing technologies. However, controllability and stability are the problems that need to be solved for practical applications. Here, by introducing a damage‐less ion implantation technology using ultralow‐energy plasma, the transport mechanisms of space charge limited current and Schottky emission are successfully realized and controlled in RRAM based on 2D Bi 2 Se 3 nanosheets. The memristors exhibit stable resistive switching behavior with a high resistive switching ratio (>10 4 ), excellent cycling endurances (300 cycles), and great retention performance (>10 4 s). The reliability and controllability of Bi 2 Se 3 memory endowed by oxygen plasma injection demonstrate the great potential of this ultralow‐energy ion implantation technology in the application of 2D RRAM.