Metal‐Organic Frameworks: 2D Metal–Organic Framework Nanosheets with Time‐Dependent and Multilevel Memristive Switching (Adv. Funct. Mater. 3/2019)

In article number 1806637, Ye Zhou, Su‐Ting Han, and co‐workers demonstrate a 2D metal‐organic framework nanosheet based memory device with a typical bipolar switching behaviour, superior retention, and high reliability. The devices show excellent multilevel information storage performance, and the...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Advanced functional materials 2019-01, Vol.29 (3), p.n/a
Hauptverfasser:	Ding, Guanglong, Wang, Yaxin, Zhang, Guixian, Zhou, Kui, Zeng, Kelin, Li, Zongxiao, Zhou, Ye, Zhang, Chen, Chen, Xiaoli, Han, Su‐Ting
Format:	Artikel
Sprache:	eng
Schlagworte:	2D nanosheet atomic force microscopy metal–organic framework resistive random access memory time‐dependent resistive switching
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	In article number 1806637, Ye Zhou, Su‐Ting Han, and co‐workers demonstrate a 2D metal‐organic framework nanosheet based memory device with a typical bipolar switching behaviour, superior retention, and high reliability. The devices show excellent multilevel information storage performance, and the percolated conducting paths model has been verified by the Weibull distribution.
ISSN:	1616-301X 1616-3028
DOI:	10.1002/adfm.201970018