Rear‐Passivated Ultrathin Cu(In,Ga)Se 2 Films by Al 2 O 3 Nanostructures Using Glancing Angle Deposition Toward Photovoltaic Devices with Enhanced Efficiency

In this work, for the first time, the addition of aluminum oxide nanostructures (Al 2 O 3 NSs) grown by glancing angle deposition (GLAD) is investigated on an ultrathin Cu(In,Ga)Se 2 device (400 nm) fabricated using a sequential process, i.e., post‐selenization of the metallic precursor layer. The m...

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Veröffentlicht in:	Advanced functional materials 2019-11, Vol.29 (48)
Hauptverfasser:	Chen, Chia‐Wei, Tsai, Hung‐Wei, Wang, Yi‐Chung, Shih, Yu‐Chuan, Su, Teng‐Yu, Yang, Chen‐Hua, Lin, Wei‐Sheng, Shen, Chang‐Hong, Shieh, Jia‐Ming, Chueh, Yu‐Lun
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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