Resistive‐Switching Memory: Investigation of Time–Dependent Resistive Switching Behaviors of Unipolar Nonvolatile Organic Memory Devices (Adv. Funct. Mater. 35/2018)

Time‐dependent resistive switching of organic unipolar resistive memory devices is investigated by Keehoon Kang, Takhee Lee, and co‐workers in article number 1801162. Real‐time current tracing under constant voltage stress reveals a stepwise current increase. This increase reflects the formation of...

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Veröffentlicht in:	Advanced functional materials 2018-08, Vol.28 (35), p.n/a
Hauptverfasser:	Lee, Woocheol, Kim, Youngrok, Song, Younggul, Cho, Kyungjune, Yoo, Daekyoung, Ahn, Heebeom, Kang, Keehoon, Lee, Takhee
Format:	Artikel
Sprache:	eng
Schlagworte:	organic memory devices time–dependent resistive switching unipolar resistive memory devices Weibull distribution
Online-Zugang:	Volltext
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Zusammenfassung:	Time‐dependent resistive switching of organic unipolar resistive memory devices is investigated by Keehoon Kang, Takhee Lee, and co‐workers in article number 1801162. Real‐time current tracing under constant voltage stress reveals a stepwise current increase. This increase reflects the formation of well‐connected current paths which develop into a percolation network. Statistically analyzing the switching time of memory devices made of various materials reveals a common probabilistic nature of the turn‐on process.
ISSN:	1616-301X 1616-3028
DOI:	10.1002/adfm.201870249