All‐Solution‐Processed Cu 2 ZnSnS 4 Solar Cells with Self‐Depleted Na 2 S Back Contact Modification Layer

The thin‐film photovoltaic material Cu 2 ZnSnS 4 (CZTS) has drawn worldwide attention in recent years due to its earth‐abundant, nontoxic element constitution, and remarkable photovoltaic performance. Although state‐of‐the‐art power conversion efficiency is achieved by hydrazine‐based methods, effor...

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Veröffentlicht in:Advanced functional materials 2018-04, Vol.28 (14)
Hauptverfasser: Gu, Youchen, Shen, Heping, Ye, Chen, Dai, Xuezeng, Cui, Qian, Li, Jianbao, Hao, Feng, Hao, Xiaojing, Lin, Hong
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container_end_page
container_issue 14
container_start_page
container_title Advanced functional materials
container_volume 28
creator Gu, Youchen
Shen, Heping
Ye, Chen
Dai, Xuezeng
Cui, Qian
Li, Jianbao
Hao, Feng
Hao, Xiaojing
Lin, Hong
description The thin‐film photovoltaic material Cu 2 ZnSnS 4 (CZTS) has drawn worldwide attention in recent years due to its earth‐abundant, nontoxic element constitution, and remarkable photovoltaic performance. Although state‐of‐the‐art power conversion efficiency is achieved by hydrazine‐based methods, effort to fabricate such devices in a high throughput, environmental‐friendly way is still highlydesired. Here a hydrazine‐free all‐solution‐processed CZTS solar cell with Na 2 S self‐depleted back contact modification layer for the first time is demonstrated, using a ball‐milled CZTS as light absorber, low‐temperature solution‐processed ZnO electron‐transport layer as well as silver‐nanowire transparent electrode. The inserting of Na 2 S self‐depleted layer is proven to effectively stabilize the CZTS/Mo interface by eliminating a detrimental phase segregation reaction between CZTS and Mo‐coated soda lime glass, thus leading to a better crystallinity of CZTS light absorbing layer, enhanced carrier transportation at CZTS/Mo interface as well as a smaller series resistance. Furthermore, the self‐depletion feature of the Na 2 S modification layer also averts hole‐transportation barrier within the devices. The results show the vital importance of interfacial engineering for these CZST devices and the Na 2 S interface layer can be extended to other optoelectronic devices using Mo contact.
doi_str_mv 10.1002/adfm.201703369
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title All‐Solution‐Processed Cu 2 ZnSnS 4 Solar Cells with Self‐Depleted Na 2 S Back Contact Modification Layer
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