All‐Solution‐Processed Cu 2 ZnSnS 4 Solar Cells with Self‐Depleted Na 2 S Back Contact Modification Layer

The thin‐film photovoltaic material Cu 2 ZnSnS 4 (CZTS) has drawn worldwide attention in recent years due to its earth‐abundant, nontoxic element constitution, and remarkable photovoltaic performance. Although state‐of‐the‐art power conversion efficiency is achieved by hydrazine‐based methods, effor...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced functional materials 2018-04, Vol.28 (14)
Hauptverfasser: Gu, Youchen, Shen, Heping, Ye, Chen, Dai, Xuezeng, Cui, Qian, Li, Jianbao, Hao, Feng, Hao, Xiaojing, Lin, Hong
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The thin‐film photovoltaic material Cu 2 ZnSnS 4 (CZTS) has drawn worldwide attention in recent years due to its earth‐abundant, nontoxic element constitution, and remarkable photovoltaic performance. Although state‐of‐the‐art power conversion efficiency is achieved by hydrazine‐based methods, effort to fabricate such devices in a high throughput, environmental‐friendly way is still highlydesired. Here a hydrazine‐free all‐solution‐processed CZTS solar cell with Na 2 S self‐depleted back contact modification layer for the first time is demonstrated, using a ball‐milled CZTS as light absorber, low‐temperature solution‐processed ZnO electron‐transport layer as well as silver‐nanowire transparent electrode. The inserting of Na 2 S self‐depleted layer is proven to effectively stabilize the CZTS/Mo interface by eliminating a detrimental phase segregation reaction between CZTS and Mo‐coated soda lime glass, thus leading to a better crystallinity of CZTS light absorbing layer, enhanced carrier transportation at CZTS/Mo interface as well as a smaller series resistance. Furthermore, the self‐depletion feature of the Na 2 S modification layer also averts hole‐transportation barrier within the devices. The results show the vital importance of interfacial engineering for these CZST devices and the Na 2 S interface layer can be extended to other optoelectronic devices using Mo contact.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201703369