Photodetectors: High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping (Adv. Funct. Mater. 27/2015)

Photodetectors: High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping (Adv. Funct. Mater. 27/2015)

High‐performance transition metal dichalcogenide photo–detectors are enhanced by self‐assembled mono‐layer (SAM) doping. On page 4219, J.‐H. Park and colleagues show how the photoresponsivity of WSe2 and MoS2 photodetectors is dramatically improved as a result of the enhancement of transition metal...

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Veröffentlicht in:Advanced functional materials 2015-07, Vol.25 (27), p.4368-4368
Hauptverfasser: Kang, Dong-Ho, Kim, Myung-Soo, Shim, Jaewoo, Jeon, Jeaho, Park, Hyung-Youl, Jung, Woo-Shik, Yu, Hyun-Yong, Pang, Chang-Hyun, Lee, Sungjoo, Park, Jin-Hong
Format: Artikel
Sprache:eng
Schlagworte:
device performance
dichalcogenides
doping
optoelectronic devices
semiconductors
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Zusammenfassung:High‐performance transition metal dichalcogenide photo–detectors are enhanced by self‐assembled mono‐layer (SAM) doping. On page 4219, J.‐H. Park and colleagues show how the photoresponsivity of WSe2 and MoS2 photodetectors is dramatically improved as a result of the enhancement of transition metal dichalcogenides optical properties by SAM doping. This is also investigated in detail through photoluminescence analysis.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201570188