Enhancement of Piezoelectric Response in Yttrium Aluminum Nitride (Y x Al 1‐ x N) Thin Films

Alloying rare earth elements into aluminum nitride (AlN) thin films to increase the piezoelectric response has gained a lot of attention in the past few years. Many rare earth elements are investigated in which scandium alloying resulted in the highest piezoelectric response for AlN. At the same time, researchers have also theoretically explored yttrium alloying as a feasible and economical alternative to scandium. Herein, for the first time, experimentally, the increase of the piezoelectric response of sputter‐deposited Y x Al 1– x N thin films as a function of increasing yttrium concentration as predicted by density functional theory calculations is demonstrated. Using differently manufactured targets, Y x Al 1– x N thin films with four different yttrium alloying concentrations (9, 12, 15, and 20 at%). are synthesized. Detailed thin‐film analysis is carried out and the highest value of d 33 measured is 12 pC N −1 for Y 0.2 Al 0.8 N, which is a 250% increase compared to pure AlN. Even more, the Young's modulus decreases with increasing yttrium concentration in excellent agreement with theoretical predictions. Finally, Y 0.15 Al 0.85 N and Y 0.2 Al 0.8 N layers show high crystalline stability in pure oxygen environment up to 800 °C, demonstrating high oxidation resistance even under harsh environmental conditions.