Initiated Chemical Vapor Deposition of Polymer Films at High Process Temperature for the Fabrication of Organic/Inorganic Multilayer Thin Film Encapsulation

For the fabrication of thin film encapsulation (TFE), sequential deposition of organic and inorganic layers is inevitable. A single‐chamber system of initiated chemical vapor deposition (iCVD) and atomic layer deposition (ALD) is reported previously. Here, the substrate temperature (Ts) of the iCVD is aligned with that of ALD to facilitate the transition of the deposition mode by removing delays caused by repeated heating/cooling of the substrate. While increasing the Ts of iCVD from 40 to 90 °C, the process pressure is optimized so that the properties of the organic film are unchanged from that deposited with 40 °C. The Ts alignment significantly reduced the time delay during transition of the deposition mode, and the fabrication of the TFE is expedited. Within a single‐chamber system capable of both initiated chemical vapor deposition (iCVD) and atomic layer deposition (ALD) processes, the substrate temperature of iCVD is increased to 90 °C to equalize the process temperature with ALD. The transition between organic and inorganic layer deposition modes is facilitated without any loss of barrier property of the fabricated multilayer thin film encapsulation.