(Invited) P-Type 3C-SiC Photocathode for Solar to Hydrogen Energy Conversion
Silicon carbide (SiC) is a chemically stable and photocatalytic semiconductor material. Among SiC polytypes, 3C-SiC has the smallest band gap (2.3 eV), and thus 3C-SiC is capable to absorb a significant part of solar light. The use of p-type semiconductor as photocathode reduces hydrogen in water. C...
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Veröffentlicht in: | ECS transactions 2017-08, Vol.80 (4), p.43-55, Article 43 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Silicon carbide (SiC) is a chemically stable and photocatalytic semiconductor material. Among SiC polytypes, 3C-SiC has the smallest band gap (2.3 eV), and thus 3C-SiC is capable to absorb a significant part of solar light. The use of p-type semiconductor as photocathode reduces hydrogen in water. Cathodic operation prevents oxidation of photocatalytic materials. Therefore p-type 3C-SiC will be an efficient and durable photocatalyst. Our experiments have revealed that p-type 3C-SiC acts as photocathodes with excellent performance. Solar to hydrogen conversion efficiency for p-type 3C-SiC photocathodes with Pt cocatalysts was 0.52 %. Considering such a high efficiency and possibility of further improvement, SiC is a very promising material for the solar to hydrogen conversion technology. |
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ISSN: | 1938-5862 1938-6737 1938-6737 1938-5862 |
DOI: | 10.1149/08004.0043ecst |