Effect of Electron Doping on the Crystal Structure and Physical Properties of an n = 3 Ruddlesden–Popper Compound La4Ni3O10

The physical properties of La4Ni3O10 with a two-dimensional (2D)-like Ruddlesden–Popper-type crystal structure are extraordinarily dependent on temperature and chemical substitution. By introducing Al3+ atoms randomly at Ni sites, the average oxidation state for the two nonequivalent Ni cations is t...

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Veröffentlicht in:ACS applied electronic materials 2021-06, Vol.3 (6), p.2671-2684
Hauptverfasser: Periyasamy, Manimuthu, Patra, Lokanath, Fjellvåg, Øystein S, Ravindran, Ponniah, Sørby, Magnus H, Kumar, Susmit, Sjåstad, Anja O, Fjellvåg, Helmer
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Sprache:eng
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Zusammenfassung:The physical properties of La4Ni3O10 with a two-dimensional (2D)-like Ruddlesden–Popper-type crystal structure are extraordinarily dependent on temperature and chemical substitution. By introducing Al3+ atoms randomly at Ni sites, the average oxidation state for the two nonequivalent Ni cations is tuned and adopts values below the average of +2.67 in La4Ni3O10. La4Ni3–x Al x O10 is a solid solution for 0.00 ≤ x ≤ 1.00 and is prepared by the citric acid method, with attention paid to compositional control and homogeneity at low Al level (x) concentrations. The samples adopt a slightly distorted monoclinic structure [P21/a (Z = 4)], evidenced by peak broadening of the (117) reflection. We report a remarkable effect on the electronic properties induced by tiny amounts of homogeneously distributed Al cations, with clear correspondence between resistivity, magnetization, diffraction, and density functional theory (DFT) data. DFT shows that electronically, there is no significant difference between the nonequivalent Ni atoms and no tendency toward any Ni3+/Ni2+ charge ordering. The resistivity changes from metallic to semiconducting/insulating with increasing band gap at higher Al levels, consistent with results from DFT. The metal-to-metal (M-T-M) transition reported for La4Ni3O10, which is often interpreted as a charge density wave, is maintained until x = 0.15 Al level. However, the temperature characteristics of the resistivity change already at very low Al levels (x ≤ 0.03). A coupling of the M-T-M transition to the lattice is evidenced by an anomaly in the unit cell dimensions. Moreover, there is an excellent correlation between the resistivity and magnetization data shown by the metallic and Pauli paramagnetic regime for La4Ni3–x Al x O10 with x < 0.25. The introduction of the fixed +3 oxidation state of Al atoms randomly at the Ni sites reduces the overall oxidation state of Ni2.67+ by keeping the oxygen stoichiometry unchanged. In addition, the nonmagnetic Al3+ for Ni is likely to block Ni–O–Ni exchange pathways through −Ni–O–Al–O–Ni– fragments into the network of corner-shared octahedra with the emergence of possible short-range ferromagnetic ordering of the ferromagnetic domains/clusters that are formed due to Al substitutional disorder in a paramagnetic insulating matrix.
ISSN:2637-6113
2637-6113
DOI:10.1021/acsaelm.1c00270