Switching mechanism for TiO2 memristor and quantitative analysis of exponential model parameters

The memristor, as the fourth basic circuit element, has drawn worldwide attention since its physical implementation was released by HP Labs in 2008. However, at the nano-scale, there are many difficulties for memristor physical realization. So a better understanding and analysis of a good model will help us to study the characteristics of a memristor. In this paper, we analyze a possible mechanism for the switching behavior of a memristor with a Pt/TiO2/Pt structure, and explain the changes of electronic barrier at the interface of Pt/TiO2. Then, a quantitative analysis about each parameter in the exponential model of memristor is conducted based on the calculation results. The analysis results are validated by simulation results. The efforts made in this paper will provide researchers with theoretical guidance on choosing appropriate values for(α, β, χ, γ) in this exponential model.