HIGH TEMPERATURE ESR PROPERTIES OF P, B-DOPED a-Si1-xCx:H FILMS

HIGH TEMPERATURE ESR PROPERTIES OF P, B-DOPED a-Si1-xCx:H FILMS

<正> Ⅰ. INTRODUCTION Hydrogenated amorphous silicon-carbon (a-Si1-xCx:H) film is an important amorphous photoelectric semiconductor material having a wide and variable band gap. It reduces the interface reflection and surface absorption of incident light when it is

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Bibliographische Detailangaben
Veröffentlicht in:科学通报：英文版 1988 (21), p.1767-1771
1. Verfasser: 张仿清 陈光华 程金龙
Format: Artikel
Sprache:eng
Schlagworte:
bond
amorphous
dangling
electron
band
semiconductor
localized
state
tail
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Zusammenfassung:<正> Ⅰ. INTRODUCTION Hydrogenated amorphous silicon-carbon (a-Si1-xCx:H) film is an important amorphous photoelectric semiconductor material having a wide and variable band gap. It reduces the interface reflection and surface absorption of incident light when it is
ISSN:2095-9273