ELECTROCHEMICAL INVESTIGATION OF GaAs HETEROSTRUCTURE MATERIALS

<正> The Ⅲ-Ⅴ compound semiconductor devices such as FET, laser, solar cell, etc. were developed recently. These devices require materials of multiple heterojunction and p-n junction structures. But it is impossible to determine their carrier concentration, layer thickness and the positi...

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Veröffentlicht in:	科学通报：英文版 1982 (10), p.1057-1062
1. Verfasser:	陈自姚邵永富彭瑞伍
Format:	Artikel
Sprache:	eng
Schlagworte:	junction illumination impossible breakdown dissolution Profiles tightly illustrate pressed corder
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description	<正> The Ⅲ-Ⅴ compound semiconductor devices such as FET, laser, solar cell, etc. were developed recently. These devices require materials of multiple heterojunction and p-n junction structures. But it is impossible to determine their carrier concentration, layer thickness and the position of p-n junction simultaneously by general C-V method and the Hall measurement. In this aspect some progress has been made by electrochemical methods, nevertheless, the measurement of carrier concentration profile and the position of p-n junction of heterostructure materials have not yet been reported.
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source	Alma/SFX Local Collection
subjects	junction illumination impossible breakdown dissolution Profiles tightly illustrate pressed corder
title	ELECTROCHEMICAL INVESTIGATION OF GaAs HETEROSTRUCTURE MATERIALS
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