ELECTROCHEMICAL INVESTIGATION OF GaAs HETEROSTRUCTURE MATERIALS

<正> The Ⅲ-Ⅴ compound semiconductor devices such as FET, laser, solar cell, etc. were developed recently. These devices require materials of multiple heterojunction and p-n junction structures. But it is impossible to determine their carrier concentration, layer thickness and the position of p-n junction simultaneously by general C-V method and the Hall measurement. In this aspect some progress has been made by electrochemical methods, nevertheless, the measurement of carrier concentration profile and the position of p-n junction of heterostructure materials have not yet been reported.