Enhanced performance of field-effect transistors based on C60 single crystals with conjugated polyelectrolyte
Contact resistance at the interface between metal electrodes and semiconductors can significantly limit the performance of organic field-effect transistors,leading to a distinct voltage drop at the interface.Here,we demonstrate enhanced performance of n-channel field-effect transistors based on solu...
Gespeichert in:
Veröffentlicht in: | 中国科学:化学英文版 2017 (4), p.490-496 |
---|---|
1. Verfasser: | |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Contact resistance at the interface between metal electrodes and semiconductors can significantly limit the performance of organic field-effect transistors,leading to a distinct voltage drop at the interface.Here,we demonstrate enhanced performance of n-channel field-effect transistors based on solution-grown C60 single-crystalline ribbons by introducing an interlayer of a conjugated polyelectrolyte(CPE) composed of poly[(9,9-bis(3’-((N,N-dimethyl)-N-ethylamnionium)-propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)]dibromide(PFN+Br-).The PFN+Br-interlayer greatly improves the charge injection.Consequently,the electron mobility is promoted up to 5.60 cm2V-1 s-1 and the threshold voltage decreased dramatically with the minimum of4.90 V. |
---|---|
ISSN: | 1674-7291 1869-1870 |