Luminescence of Er doped in silicon by electrochemical method

Luminescence of Er doped in silicon by electrochemical method

<正> Early in 1983, Ennen et al. first realized the photoluminescence (PL) and the electroluminescence (EL) of Er-doped Si (Si: Er) at the wavelength of 1.53 μm. An Si-based lightemitting diode (LED), working at this wavelength, will be an essential device on a single chip of Si-based o...

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Veröffentlicht in:自然科学进展：英文版 1997 (1), p.102-107
Hauptverfasser: 盛篪, 才永明, 龚大卫, 樊永良, 刘晓晗, 黄大鸣, 王迅
Format: Artikel
Sprache:eng
Schlagworte:
Er3
ion
luminescence
electrochemical
luminescence
porous
silicon
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Zusammenfassung:<正> Early in 1983, Ennen et al. first realized the photoluminescence (PL) and the electroluminescence (EL) of Er-doped Si (Si: Er) at the wavelength of 1.53 μm. An Si-based lightemitting diode (LED), working at this wavelength, will be an essential device on a single chip of Si-based optoelectronic integrated circuit for optical fiber communication. Two problems must be solved before Si:Er LEDs can meet the requirement of practical uses. First, it is needed to in-
ISSN:1002-0071