Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent Thermal Resistance

A scalable large-signal model of AlGa N/Ga N High electron mobility transistors（HEMTs）suitable for multi-harmonic characterizations is presented.This model is fulfilled utilizing an improved drain-source current（Ids） formulation with a geometry-dependent thermal resistance（Rth） and charge-trapping modification.The Idsmodel is capable of accurately modeling the highorder transconductance（gm）,which is significant for the prediction of multi-harmonic characteristics.The thermal resistance is identified by the electro-thermal Finite element method（FEM） simulations,which are physically and easily scalable with the finger numbers,unit gate width and power dissipations of the device.Accurate predictions of the quiescent currents,S-parameters up to 40 GHz,and large-signal harmonic performance for the devices with different gate peripheries have been achieved by the proposed model.