Heavy ion micro-beam study of single-event transient（SET） in Si Ge heterjunction bipolar transistor

Heavy ion micro-beam study of single-event transient（SET） in Si Ge heterjunction bipolar transistor

Silicon-germainum heterojunction bipolar transistor（Si Ge HBT）has been demonstrated to be suitable in extreme environment because of its superior temperature characteristics which can operate from 43 K to 400 K[1].In addition,outstanding hardness to both total ionizing dose（TID）radiation and displac...

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Veröffentlicht in:中国科学：信息科学（英文版） 2017, Vol.60 (12), p.116-118
Hauptverfasser: Jinxin ZHANG, Hongxia GUO, Fengqi ZHANG, Chaohui HE, Pei LI, Yunyi YAN, Hui WANG, Linxia ZHANG
Format: Artikel
Sprache:eng
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Zusammenfassung:Silicon-germainum heterojunction bipolar transistor（Si Ge HBT）has been demonstrated to be suitable in extreme environment because of its superior temperature characteristics which can operate from 43 K to 400 K[1].In addition,outstanding hardness to both total ionizing dose（TID）radiation and displacement damage make Si Ge HBT technology particularly attractive for space
ISSN:1674-733X
1869-1919