A sensitivity analysis of millimeter wave characteristics of SiC IMPATT diodes

Ionization rate coefficients and saturation drift velocities for electrons and holes are the vital material parameters in determining the performance of an IMPATT diode.We have performed a sensitivity analysis of the millimeter wave characteristics of 4H-SiC and 6H-SiC IMPATT diodes with reference t...

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Veröffentlicht in:	Journal of semiconductors 2017-06, Vol.38 (6), p.58-65
Hauptverfasser:	Swain, S K, Pradhan, J, Dash, G N, Pattanaik, S R
Format:	Artikel
Sprache:	eng
Schlagworte:	IMPATT ionization rate millimeter wave saturation drift velocity SiC 关键参数器件特性材料数据毫米波灵敏度分析雪崩二极管饱和漂移速度
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Zusammenfassung:	Ionization rate coefficients and saturation drift velocities for electrons and holes are the vital material parameters in determining the performance of an IMPATT diode.We have performed a sensitivity analysis of the millimeter wave characteristics of 4H-SiC and 6H-SiC IMPATT diodes with reference to the above mentioned material data and an operating frequency of 220 GHz.The effect of a small variation in the ionization rate and drift velocity on the device characteristics like break down voltage,efficiency,noise measure and power output has been presented here.
ISSN:	1674-4926
DOI:	10.1088/1674-4926/38/6/064003