Gallium bismuth halide GaBi-X2 (X = I, Br, CI) monolayers with distorted hexagonal framework: Novel room- temperature quantum spin Hall insulators

Quantum spin Hall (QSH) insulators with a large topologically nontrivial bulk gap are crucial for future applications of the QSH effect. Among these, group III-V monolayers and their halides, which have a chair structure (regular hexagonal framework), have been widely studied. Using first-principles...

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Veröffentlicht in:纳米研究:英文版 2017, Vol.10 (6), p.2168-2180
1. Verfasser: Linyang Li Ortwin Leenaerts Xiangru Kong Xin Chen Mingwen Zhao Francois M. Peeters
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Sprache:eng
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Zusammenfassung:Quantum spin Hall (QSH) insulators with a large topologically nontrivial bulk gap are crucial for future applications of the QSH effect. Among these, group III-V monolayers and their halides, which have a chair structure (regular hexagonal framework), have been widely studied. Using first-principles calculations, we formulate a new structure model for the functionalized group III-V monolayers, which consist of rectangular GaBi-X2 (X = I, Br, C1) monolayers with a distorted hexagonal framework (DHF). These structures have a far lower energy than the GaBi-X2 monolayers with a chair structure. Remarkably, the DHF GaBi-X2 monolayers are all QSH insulators, which exhibit sizeable nontrivial band gaps ranging from 0.17 to 0.39 eV. The band gaps can be widely tuned by applying different spin-orbit coupling strengths, resulting in a distorted Dirac cone.
ISSN:1998-0124
1998-0000