Memristive Behavior Based on Ba-Doped SrTiO3 Films

The Sr0.95Ba0.05 TiO3 （SBT） nanometer film is prepared on the commercially available Pt/TiO2/SiO2/Si substrate by radio-frequency magnetron sputtering. The x-ray diffraction pattern and the scanning electron microscope image of the cross-sectional profile of the SBT nanometer film are depicted. The memristive mechanism is inferred. The mathematical model M（q） = 12.3656 - 267.4038｜q（t）｜is calculated, where M（q） denotes the memristance depending on the quantity of electric charge, and q（t） denotes the quantity of electric charge depending on the time. The theoretical I-V characteristics of the SBT nanometer film are obtained by the mathematical model. The results show that the theoretical I-V characteristics are consistent with the measured I-V characteristics. Moreover, the mathematical model could guide the research on applications of the memristor.