Experimental Investigation of Electronic Structure of La(O,F)BiSe2
La(O,F)BiSe2 is a layered superconductor and has the same crystal structure with La(O,F)BiS2. We investigate the electronic structure of La(O,F)BiSe2 using the angle-resolved photoemission spectroscopy. Two electron-like Fermi surfaces around X(π, 0) are observed, corresponding to the electron dopin...
Gespeichert in:
Veröffentlicht in: | 中国物理快报:英文版 2016, Vol.33 (12), p.120-123 |
---|---|
1. Verfasser: | |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | La(O,F)BiSe2 is a layered superconductor and has the same crystal structure with La(O,F)BiS2. We investigate the electronic structure of La(O,F)BiSe2 using the angle-resolved photoemission spectroscopy. Two electron-like Fermi surfaces around X(π, 0) are observed, corresponding to the electron doping of 0.23 per Bi site. We clearly resolve anisotropic band splitting along both Г-X and M-X due to the cooperative effects of large spin-orbit coupling and interlayer coupling. Moreover, we observe an almost non-dispersive electronic state around -0.2 eV between the electron-like bands. This state vanishes after in-situ K evaporation, indicating that it could be the localized surface state caused by defects on the cleaved surface. |
---|---|
ISSN: | 0256-307X 1741-3540 |