Scaling relation of domain competition on(2+1)-dimensional ballistic deposition model with surface diffusion

During heteroepitaxial overlayer growth multiple crystal domains nucleated on a substrate surface compete with each other in such a manner that a domain covered by neighboring ones stops growing.The number density of active domains ρ decreases as the height h increases.A simple scaling argument lead...

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Veröffentlicht in:半导体学报:英文版 2016, Vol.37 (9), p.12-17
1. Verfasser: Kenyu Osada Hiroyasu Katsuno Toshiharu Irisawa Yukio Saito
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Sprache:eng
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Zusammenfassung:During heteroepitaxial overlayer growth multiple crystal domains nucleated on a substrate surface compete with each other in such a manner that a domain covered by neighboring ones stops growing.The number density of active domains ρ decreases as the height h increases.A simple scaling argument leads to a scaling law of ρ~ h~(-γ) with a coarsening exponent γ=d/z,where d is the dimension of the substrate surface and z the dynamic exponent of a growth front.This scaling relation is confirmed by performing kinetic Monte Carlo simulations of the ballistic deposition model on a two-dimensional(d=2) surface,even when an isolated deposited particle diffuses on a crystal surface.
ISSN:1674-4926