Exciton–phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells

The exciton-phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells（MQWs） is studied by deepultraviolet time-integrated and time-resolved photoluminescence（PL）.Up to four longitudinal-optical（LO） phonon replicas of exciton recombination are observed,indicating the strong coupling of excitons with LO phonons in the MQWs.Moreover,the exciton-phonon coupling strength in the MQWs is quantified by the Huang-Rhys factor,and it keeps almost constant in a temperature range from 10 K to 120 K.This result can be explained in terms of effects of fluctuations in the well thickness in the MQWs and the temperature on the exciton-phonon interaction.