Effects of p-type Ga N thickness on optical properties of Ga N-based light-emitting diodes

The influence of p-type Ga N（p Ga N） thickness on the light output power（LOP） and internal quantum efficiency（IQE） of light emitting diode（LED） was studied by experiments and simulations. The LOP of Ga N-based LED increases as the thickness of p Ga N layer decreases from 300 nm to 100 nm, and then decreases as the thickness decreases to 50 nm. The LOP of LED with 100-nm-thick pG a N increases by 30.9% compared with that of the conventional LED with 300-nm-thick p Ga N. The variation trend of IQE is similar to that of LOP as the decrease of Ga N thickness. The simulation results demonstrate that the higher light efficiency of LED with 100-nm-thick p Ga N is ascribed to the improvements of the carrier concentrations and recombination rates.