Growth mechanism of atomic-layer-deposited TiAIC metal gate based on TiCI4 and TMA precursors

TiAIC metal gate for the metal-oxide-semiconductor field-effect-transistor （MOSFET） is grown by the atorr/ic layer deposition method using TiCI4 and AI（CH3） 3 （TMA） as precursors. It is found that the major PrOduct of the TIC14 and TMA reaction is TiA1C, and the components of C and A1 are found to increase with higher growth temperature. The reaction mechanism is investigated by using x-ray photoemission spectroscopy （XPS）, Fourier transform infrared spectroscopy （FFIR）, and scanning electron microscope （SEM）. The reaction mechanism is as follows. Ti is generated through the reduction of TiCI4 by TMA. The reductive behavior of TMA involves the formation of ethane. The Ti from the reduction of TIC14 by TMA reacts with ethane easily forming heterogenetic TiCH2, TiCH=CH2 and TiC fragments. In addition, TMA thermally decomposes, driving A1 into the TiC film and leading to TiA1C formation. With the growth temperature increasing, TMA decomposes more severely, resulting in more C and A1 in the TiA1C film. Thus, the film composition can be controlled by the growth temperature to a certain extent.