Implantation induced defects and electrical properties of Sb-imDlanted ZnO

Defects in Sb implanted ZnO single crystals have been studied by using photoluminescence （PL） spectroscopy, X-ray diffrac- tion （XRD） and Raman scattering. Electrical properties of the samples were analyzed by Hall effect measurement. The results indicate that the annealed Sb-implanted sample is n-type with a free electron concentration of the same amplitude as the calcu- lated implantation concentration. The well-known oxygen vacancy related deep level green PL band is suppressed in the as-implanted sample and recovers to the level close to the as-grown ZnO single crystal after annealing. These phenomena sug- gest that a large portion of as-implanted Sb atoms occupy oxygen lattice site in an unstable state and move to the interstitial site, forming the complex donor defect upon high temperature annealing, resulting in n-type conduction even if the implanta- tion dose is quite high.