Epitaxial evolution on buried cracks in a strain-controlled AIN/GaN superlattice interlayer between AIGaN/GaN multiple quantum wells and a GaN template

Epitaxial evolution of buried cracks in a strain-controlled AIN/GaN superlattice interlayer （IL） grown on GaN tem- plate, resulting in crack-free AIGaN/GaN multiple quantum wells （MQW）, was investigated. The processes of filling the buried cracks include crack formation in the IL, coalescence from both side walls of the crack, build-up of an MQW-layer hump above the cracks, lateral expansion and merging with the surrounding MQW, and two-dimensional step flow growth. It was confirmed that the filling content in the buried cracks is pure GaN, originating from the deposition of the GaN thin layer directly after the IL. Migration of Ga adatoms into the cracks plays a key role in the filling the buried cracks.