A 2.05 eV AIGaInP sub-cell used in next generation solar cells
An Al0.13GalnP sub-cell used as the top cell in the next generation of high efficiency multi-junction solar cells is fabricated. An efficiency of 10.04% with 1457.3 mV in Voc and 11.9 mA/cm2 in Isc was obtained. QE comparison was carried out to verify the influence of an O-related defect introduced...
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Veröffentlicht in: | 半导体学报:英文版 2014 (9), p.83-86 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | An Al0.13GalnP sub-cell used as the top cell in the next generation of high efficiency multi-junction solar cells is fabricated. An efficiency of 10.04% with 1457.3 mV in Voc and 11.9 mA/cm2 in Isc was obtained. QE comparison was carried out to verify the influence of an O-related defect introduced by the high Al-content materials on the cell performance during MOCVD growth. Hetero-structures are employed to confirm the origin of the decreasing short circuit current density compared to a GalnP single junction solar cell. An effective method to improve the performance of broadband solar cells by increasing Isc with a cost of Voc was proposed. |
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ISSN: | 1674-4926 |