Room-Temperature Operation of 2.4 μm InGaAsSb/A1GaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

Room-Temperature Operation of 2.4 μm InGaAsSb/A1GaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

GaSb-based 2.4μm InGaAsSb/AIGaAsSb type-I quantum-well laser diode is fabricated. The laser is designed consisting of three In0.35 Ga0.65As0.1Sb0.9/Al0.35 Ga0.65 As0.02Sb0.98 quantum wells with 1% compressive strain located in the central part of an undoped Al0.35Ga0.65As0.02Sb0.98 waveguide layer....

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Veröffentlicht in:中国物理快报：英文版 2014 (5), p.69-71
1. Verfasser: 邢军亮 张宇 廖永平 王娟 向伟 徐应强 王国伟 任正伟 牛智川
Format: Artikel
Sprache:eng
Schlagworte:
压缩应变
室温
操作模式
激光二极管
砷化铟镓
管具
量子阱
阈值电流密度
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Zusammenfassung:GaSb-based 2.4μm InGaAsSb/AIGaAsSb type-I quantum-well laser diode is fabricated. The laser is designed consisting of three In0.35 Ga0.65As0.1Sb0.9/Al0.35 Ga0.65 As0.02Sb0.98 quantum wells with 1% compressive strain located in the central part of an undoped Al0.35Ga0.65As0.02Sb0.98 waveguide layer. The output power of the laser with a 50-μm-wide i-ram-long cavity is 28roW, and the threshold current density is 400A/cm2 under continuous wave operation mode at room temperature.
ISSN:0256-307X
1741-3540