Investigation of the current collapse induced in InGaN back barrier AIGaN/GaN high electron mobility transistors

Current collapses were studied, which were observed in A1GaN/GaN high electron mobility transistors （HEMTs） with and without InGaN back barrier （BB） as a result of short-term bias stress. More serious drain current collapses were observed in InGaN BB A1GaN/GaN HEMTs compared with the traditional HEM...

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Veröffentlicht in:	半导体学报：英文版 2013 (10), p.43-45
1. Verfasser:	万晓佳 王晓亮 肖红领 冯春 姜丽娟 渠慎奇 王占国 侯洵
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN HEMT器件 InGaN 偏压应力 氮化铟镓 电流崩塌 表面状态 高电子迁移率晶体管
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