Investigation of the current collapse induced in InGaN back barrier AIGaN/GaN high electron mobility transistors

Current collapses were studied, which were observed in A1GaN/GaN high electron mobility transistors （HEMTs） with and without InGaN back barrier （BB） as a result of short-term bias stress. More serious drain current collapses were observed in InGaN BB A1GaN/GaN HEMTs compared with the traditional HEMTs. The results indicate that the defects and surface states induced by the InGaN BB layer may enhance the current collapse. The surface states may be the primary mechanism of the origination of current collapse in A1GaN/GaN HEMTs for short-term direct current stress.